How atomic-layer deposition and hybrid dielectrics are redefining reliability and scaling for AI-era semiconductors.

ALD is based on the sequential use of a gas phase chemical process. The ALD cycle consists of four main steps: (1) pulsing of a precursor A, (2) purging of the reactor to remove excess precursor and ...

ALD Equipment Market ALD Equipment Market Dublin, Jan. 27, 2026 (GLOBE NEWSWIRE) -- The "ALD Equipment Market Report 2026" ...

Atomic Layer Deposition (ALD) and thin film technologies have become indispensable in modern materials science thanks to their ability to achieve angstrom‐level control over film thickness and ...

New platform delivers ALD film quality at production throughput for Wide Bandgap and other specialty device manufacturing ESPOO, Finland, Nov. 19, 2025 /PRNewswire/ -- Beneq, a global leader in Atomic ...

A group of scientists from Hanyang University has published a report reviewing and discussing the outlook of atomic layer deposition (ALD) based oxide semiconductor thin film transistors (TFTs). The ...

The fabrication of nanoscale devices increasingly relies on techniques that offer atomic‐scale precision, with Atomic Layer Deposition (ALD) and Area-Selective Deposition (ASD) at the forefront. ALD ...

The term "ALD" was first used around 2000. This technique achieves atomic layer control and conformal deposition through successive, self-limiting surface reactions. It involves introducing chemical ...

A new technical paper titled “Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement ...

As chips shrink to the nanometer scale, precise control over every fabrication step becomes essential. Atomic layer deposition (ALD) has emerged as a cornerstone of nanoelectronics, enabling the ...

Inductively coupled plasma (ICP) sources were first developed decades ago, with regular use in the semiconductor industry at a time when plasma sources primarily deposited silicon oxide and silicon ...

ALD is highly desirable for the fabrication and application of oxide semiconductor-based TFTs. We suggest that there are four key values of ALD in this area, which are illustrated in the figure: (1) ...